• DocumentCode
    3755185
  • Title

    Next generation arc welding machines based on Silicon Carbide MOSFETS and high frequency planar magnetics

  • Author

    Rodrigo C. S. Machado;Braz J. C. Filho

  • Author_Institution
    Graduate Program in Electrical engineering - Federal University of Minas Gerais - Belo Horizonte, Brazil
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    6
  • Abstract
    Silicon Carbide (SiC) Power MOSFET devices are rapidly being introduced in different applications due their advantages over their silicon (Si) counterparts. Higher switching frequency (fsw) coupled with planar magnetics opens new possibilities in terms of increasing the power density of converter, while also improving their efficiency and lowering costs. In this paper, SiC MOSFETS and planar magnetics are employed to demonstrate new possibilities in arc welding machines technology. Design details of high power density power source for a multi-process welding machine are presented. Test results for 3.9kW/150A and 200 kHz switching frequency working at rated load and under over load condition are included.
  • Keywords
    "Silicon carbide","Silicon","Switches","MOSFET","Insulated gate bipolar transistors","Switching frequency","Welding"
  • Publisher
    ieee
  • Conference_Titel
    Power Electronics Conference and 1st Southern Power Electronics Conference (COBEP/SPEC), 2015 IEEE 13th Brazilian
  • Type

    conf

  • DOI
    10.1109/COBEP.2015.7420091
  • Filename
    7420091