DocumentCode
3758471
Title
Effect of bandgap of EBL on efficiency of the p-n homojunction Si solar cell from numerical analysis
Author
Md. Feroz Ali;Md. Faruk Hossain
Author_Institution
Department of Electrical and Electronic Engineering, Pabna University of Science and Technology (PUST), 6600, Bangladesh
fYear
2015
Firstpage
245
Lastpage
248
Abstract
In this work, p-n homojunction Silicon solar cell with Electron Blocking Layer (EBL) on the top of the surface has been simulated and investigated by using Analysis of Microelectronic and Photonic Structures (AMPS-1D) simulator in respect to overall performance. By changing the thickness of the p-layer and n-layer Si and bandgap of the EBL the optimum performance and efficiency has been investigated. After completing the simulation all data from AMPS-1D has been transfer to the gragh.exe (graph plotting software) software to plot most of the graph in this paper. At the thickness of 6000 nm of each p-layer and n-layer Si and 50 nm of EBL with 2.10 eV bandgap the efficiency of 26.285% has been investigated and this type of solar cell has been proposed in this paper.
Keywords
"Photovoltaic cells","Photonic band gap","Silicon","Short-circuit currents","Photonics","Renewable energy sources","Optical losses"
Publisher
ieee
Conference_Titel
Electrical & Electronic Engineering (ICEEE), 2015 International Conference on
Print_ISBN
978-1-5090-1939-7
Type
conf
DOI
10.1109/CEEE.2015.7428268
Filename
7428268
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