• DocumentCode
    3762375
  • Title

    Polysilicon resistor degradation - modeling and mechanism

  • Author

    Sankaran Jayanarayanan

  • Author_Institution
    Maxim Integrated, San Jose CA 95134, USA
  • fYear
    2015
  • Firstpage
    111
  • Lastpage
    114
  • Abstract
    The resistance degradation of lightly doped Polysilicon Resistors (PR´s) has been studied in detail, and the degradation rate statistically modelled. After accounting for Joule Heating [1], the resistance degradation is still observed to depend on current, indicating that current affects the degradation independent of Joule Heating.
  • Keywords
    "Mathematical model","Degradation","Resistance","Resistors","Stress","Data models","Current density"
  • Publisher
    ieee
  • Conference_Titel
    Integrated Reliability Workshop (IIRW), 2015 IEEE International
  • Print_ISBN
    978-1-4673-7395-1
  • Electronic_ISBN
    2374-8036
  • Type

    conf

  • DOI
    10.1109/IIRW.2015.7437080
  • Filename
    7437080
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3762375