• DocumentCode
    3763767
  • Title

    Design of a high-voltage driver based on low-voltage CMOS with an adapted level shifter optimized for a wide range of supply voltage

  • Author

    Sara Pashmineh;Dirk Killat

  • Author_Institution
    Department Microelectronics, Brandenburg University of Technology, Cottbus, 03046, Germany
  • fYear
    2015
  • Firstpage
    5
  • Lastpage
    8
  • Abstract
    This paper presents the design of a high-voltage driver with an adapted level shifter for switching converters. The proposed HV-driver and level shifter are based on stacked standard CMOS, therefore the design is technology independent. The circuit is designed in 65-nm TSMC technology with a nominal voltage of 2.5 V and optimized for arbitrary supply voltages from 2.6 V to 6.0 V. This range is extended by 41.7% when compared against common drivers and level shifters with the circuit being suitable for a supply voltage range of 2.4 V between 2.6 V and 5.0 V. The total area of the designed level shifter is about 3.8% of that required for similar circuit in previous work.
  • Keywords
    "Logic gates","MOSFET","CMOS integrated circuits","Voltage control","Standards","Switching circuits"
  • Publisher
    ieee
  • Conference_Titel
    Electronics, Circuits, and Systems (ICECS), 2015 IEEE International Conference on
  • Type

    conf

  • DOI
    10.1109/ICECS.2015.7440235
  • Filename
    7440235