TCAD analysis of variation in channel doping concentration on 45nm Double-Gate MOSFET parameters

In this paper, the performance of a 45nm Double Gate Metal Oxide Semiconductor Field Effect Transistor (DG-MOSFET) has been analyzed at different channel doping concentrations. The characteristic curves have been studied and parameters such as threshold voltage, leakage current, ON-state current and output conductance (gd) have been extracted and compared for channel doping concentration varying from 1×1016 cm-3 to 2×1018 cm-3. The drain bias has been increased from 10mV to 1V to study the effect of Drain Induced Barrier Lowering (DIBL) at various channel doping concentrations. Furthermore, subthreshold swing and ION /IOFF ratios have been studied as they are crucial parameters for a DG-MOSFETs operation as a switch. Finally, the selection of optimum value of channel doping concentration has been discussed considering trade-offs among switching capability, ON-state current, power requirement and short channel effects such as DIBL and leakage current. The simulation and parameter extraction has been done using ATLAS™ device simulator.