Feasibility study of CdF/sub 2//CaF/sub 2/ intersubband transition lasers

Author

Watanabe, M. ; Sakamaki, N. ; Ishikawa, Takaaki

Author_Institution

Tokyo Inst. of Technol., Japan

Volume

2

fYear

2001

fDate

15-19 July 2001

Abstract

Theoretical analysis of CdF/sub 2/-CaF/sub 2/ heterostructure intersubband transition lasers on Si substrates was carried out and their threshold current density was estimated. We found that these lasers make 1.35 /spl mu/m operation feasible due to their large conduction band discontinuity at the CdF/sub 2/-CaF/sub 2/ heterointerfaces and the large optical confinement factor they exhibit when Si optical confinement layers are used. With active quantum wells of 10 periods their threshold current density is 350 A/cm/sup 2/ even at room temperature.

Keywords

cadmium compounds; calcium compounds; conduction bands; current density; laser transitions; quantum well lasers; semiconductor device models; semiconductor materials; semiconductor quantum wells; 1.35 micron; CdF/sub 2/-CaF/sub 2/; CdF/sub 2//CaF/sub 2/ intersubband transition lasers; Si optical confinement layers; Si substrates; active quantum wells; heterostructure intersubband transition lasers; large conduction band discontinuity; large optical confinement factor; quantum well lasers; room temperature; threshold current density; Electromagnetic scattering; Electrons; Laser transitions; Optical refraction; Optical scattering; Optical superlattices; Optical variables control; Particle scattering; Quantum well lasers; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2001. CLEO/Pacific Rim 2001. The 4th Pacific Rim Conference on

Conference_Location

Chiba, Japan

Print_ISBN

0-7803-6738-3

Type

conf

DOI

10.1109/CLEOPR.2001.970799

Filename

970799