Modeling of trapping effects in GaN HEMTs

In this work, we study the trapping in GaN power HEMTs and discuss effect of traps on device characteristics. Simulation setups for analysis of switching collapse and current collapse observed in pulsed I-V are also presented. We propose an RC network based trap model to capture the effect of trapping in a surface potential based compact model for GaN HEMTs. The proposed model has been verified with the hardware data for various quiescent biases and frequencies, and the model results are in excellent agreement with the hardware data.