Two-dimensional model of Dual Metal double gate tunnel FETs

Dual Metal double gate tunnel field-effect transistor (DMDG TFET) is a potential candidate for the next generation device fabrication. In this work a 2-D analytical model of the surface potential, electric field of DMDG TFET is developed by solving quasi-two-dimensional Poisson equation. These expressions can be numerically integrated to find the drain current. This model incorporates the effects of drain voltage, gate work function, gate length, gate dielectric thickness and silicon film thickness. The effectiveness of the proposed model is confirmed by a comparison with 2-D numerical simulations.