DocumentCode
376578
Title
Low dark current InGaAs p-i-n photodiodes with wide sensing wavelength range from 1 to 2.5 /spl mu/m for high SNR FT-NIR spectroscopy
Author
Umezawa, T. ; Kudo, T. ; Araki, S. ; Nakajima, S. ; Sakakibara, K. ; Wada, M.
Author_Institution
MicroDevices Design Center, Tokyo, Japan
Volume
2
fYear
2001
fDate
15-19 July 2001
Abstract
In this report we will discuss extremely low dark current, 2% lattice-mismatched InGaAs p-i-n photodiodes with high detectivity over a near-infrared wavelength range of 1-2.5 /spl mu/m and their application for a high SNR FT-NIR spectrometer.
Keywords
III-V semiconductors; dark conductivity; gallium arsenide; indium compounds; infrared spectroscopy; p-i-n photodiodes; photodetectors; 1 to 2.5 micron; InGaAs; InGaAs p-i-n photodiodes; extremely low dark current; high SNR FT-NIR spectrometer; high SNR FT-NIR spectroscopy; high detectivity; lattice-mismatched; low dark current; near infrared wavelength range; wide sensing wavelength range; Capacitance; Capacitive sensors; Dark current; Etching; Indium gallium arsenide; Infrared detectors; Lattices; PIN photodiodes; Photodetectors; Spectroscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2001. CLEO/Pacific Rim 2001. The 4th Pacific Rim Conference on
Conference_Location
Chiba, Japan
Print_ISBN
0-7803-6738-3
Type
conf
DOI
10.1109/CLEOPR.2001.970935
Filename
970935
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