DocumentCode
376614
Title
Carrier dynamics of single InAs quantum dots in a high density sample
Author
Sang-Kee Eah ; Sungchui Hohng ; Wonho Jhe ; Arakawa, Y.
Author_Institution
Dept. of Phys., Seoul Nat. Univ., South Korea
Volume
2
fYear
2001
fDate
15-19 July 2001
Abstract
We performed time-resolved photoluminescence (PL) experiments on single InAs quantum dots in a high density sample. The PL rise time is large at low excitation intensity, but small at high.
Keywords
III-V semiconductors; carrier mobility; indium compounds; photoexcitation; photoluminescence; semiconductor quantum dots; time resolved spectra; InAs; InAs quantum dots; PL rise time; carrier dynamics; high density sample; low excitation intensity; single InAs quantum dots; time-resolved photoluminescence experiments; Apertures; Delay; Gallium arsenide; Laser excitation; Laser tuning; Optical fiber devices; Photoluminescence; Quantum dots; Spectroscopy; US Department of Transportation;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2001. CLEO/Pacific Rim 2001. The 4th Pacific Rim Conference on
Conference_Location
Chiba, Japan
Print_ISBN
0-7803-6738-3
Type
conf
DOI
10.1109/CLEOPR.2001.970987
Filename
970987
Link To Document