• DocumentCode
    3766999
  • Title

    Effect of Sn dopant concentration on structural and electrical properties of ZnO nanostructures based methane gas sensor

  • Author

    A.K. Shafura;M. Hannas;N.D. Md. Sin;M Uzer;M.H. Mamat;A. Shuhaimi;Salman A.H. Alrokayan;Haseeb A. Khan;M. Rusop

  • Author_Institution
    NANO-ElecTronic Center (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Malaysia
  • fYear
    2015
  • Firstpage
    633
  • Lastpage
    637
  • Abstract
    Zinc oxide (ZnO) nanostructures had successfully prepared using sol-gel immersion method. The tin (Sn) dopant concentration was varied between 0.4 to 2.0 at.%. The surface topography and electrical properties of the ZnO nanostructures were studied using atomic force microscopy (AFM) and current-voltage (IV) measurement. The highest conductivity of 1.68 × 10-2 Scm-1 was obtained by 2.0 at.% sample. The Sn-doped ZnO sample is notably shortens the response time and recovery time with better sensitivity towards methane gas.
  • Keywords
    "Zinc oxide","II-VI semiconductor materials","Nanostructures","Gas detectors","Films"
  • Publisher
    ieee
  • Conference_Titel
    Research and Development (SCOReD), 2015 IEEE Student Conference on
  • Type

    conf

  • DOI
    10.1109/SCORED.2015.7449415
  • Filename
    7449415
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3766999