Polarization-field hysteresis loop characteristic of nanostructured ZnO/MgO bilayer film based-MFIM capacitor

This research work investigates the ferroelectric characteristic of nanostructured ZnO/MgO bilayer based MFIM capacitor. The low leakage current (10^-8 A.cm^-2) of nanostructured ZnO/MgO bilayer films were observed for all annealed bilayer films. Nanostructured ZnO/MgO bilayer film annealed at 475°C was then utilized as insulator (dielectric) layer in the fabrication of MFIM capacitor due to its high resistivity (7.15×10⁴ Ω.cm) and low leakage current density (10^-8 A.cm^-2). The optimized nanostructured ZnO/MgO bilayer film was proven to act as a stable buffer layer for the PVDF-TrFE in where the P-E loop can withstand for the applied voltage up to 190V. The polarization-field (P-E) hysteresis revealed high electrical strength of ZnO/MgO/PVDF-TrFE MFIM capacitor.