Towards novel mid-infrared quantum well lasers based on hot electrons real-space/intervalley transfer

In recent years, many research groups have focused their efforts on the development of the lasers for the far- and mid-infrared (IR) wavelength regions utilizing semiconductor structures with quantum wells (QWs). These efforts are stimulated by potential applications of coherent IR sources in spectroscopy, environmental monitoring, optical communication, astrophysics, law enforcement, and other areas of science and technology. In particular, the Quantum Cascade Lasers (QCL) - the most developed lasers of this type - have already been used in a number of applications. However, they are based on quite sophisticated QW structures, and are unable to work in CW mode at room temperature and in FIR range. Here we present discussion of the recently proposed by our group novel mid IR laser based on the hot electron phenomena (similar to those involved in the Gunn effect) in QW structures with GaAs/AlAs type layers and similar QW structures made of other material systems