• DocumentCode
    3768396
  • Title

    A 140?190 GHz amplifier based on 0.5-um InP DHBT transistor

  • Author

    Xiao Li; Oupeng Li; Yan Sun; Wei Cheng; Lei Wang; Ruimin Xu

  • Author_Institution
    Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, 210016, China
  • fYear
    2015
  • Firstpage
    356
  • Lastpage
    358
  • Abstract
    A four-stage amplifier MMIC operating at G-Band (140-220GHz) is demonstrated in this letter. The amplifier utilizes a 0.5-um single emitter InP DHBT technology. The transistor exhibits collector current density of 2 mA/um2, fT of 250 GHz and fmax of 320 GHz at Ic = 12 mA and VCE = 1.5V. The chip size is 1mm×1.1mm. Measurements show that the small signal gain is above 3 dB over 149-180 GHz frequency band, and return loss is lower than -10 dB from 140 GHz to 153 GHz.
  • Keywords
    "Indium phosphide","III-V semiconductor materials","Gain","MMICs","DH-HEMTs","Heterojunction bipolar transistors"
  • Publisher
    ieee
  • Conference_Titel
    Communication Problem-Solving (ICCP), 2015 IEEE International Conference on
  • Print_ISBN
    978-1-4673-6543-7
  • Type

    conf

  • DOI
    10.1109/ICCPS.2015.7454173
  • Filename
    7454173
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3768396