• DocumentCode
    376960
  • Title

    Large-signal modeling of microwave gallium nitride-based HFETs

  • Author

    Drozdovski, N.V. ; Caverly, R.H. ; Quinn, M.J.

  • Author_Institution
    Dept. of Electron. & Comput. Eng., Villanova Univ., PA, USA
  • Volume
    1
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    248
  • Abstract
    This paper describes the large-signal model of the heterojunction field-effect transistors (HFET) based on AlxGa1-xN/GaN heterostructure used as control components for high-power microwave and RF control devices (switches, attenuators, phase-shifters, etc.). Its use should extend power level of FET-based RF and microwave
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; junction gate field effect transistors; microwave field effect transistors; semiconductor device models; wide band gap semiconductors; AlxGa1-xN/GaN heterostructure; AlGaN-GaN; control component; heterojunction field effect transistor; high-power RF control device; high-power microwave control device; large-signal model; Attenuators; FETs; Gallium nitride; HEMTs; Heterojunctions; III-V semiconductor materials; MODFETs; Microwave devices; Radio frequency; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 2001. APMC 2001. 2001 Asia-Pacific
  • Conference_Location
    Taipei
  • Print_ISBN
    0-7803-7138-0
  • Type

    conf

  • DOI
    10.1109/APMC.2001.985633
  • Filename
    985633
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=376960