Preparation and evaluation of silicon monoxide thin film capacitors

The results of statistical studies on the preparation and evaluation of thin film capacitors are presented and discussed. The dielectric material used was silicon monoxide (SiO.) Data on single layer capacitors are presented followed by results and discussions of multilayered thin film capacitors. Thin films of SiO (1000 to 20,000 Angstroms) were vacuum deposited in stacked layers numbering up to seven (7) separated by aluminum film electrodes, onto supporting substrates of different surface characteristics. Results demonstrate the feasibility of multilayering thin film capacitors by vacuum deposition techniques in the order of the above thicknesses and indicate potential application to the Signal Corps MicroModule program.