DocumentCode
3772161
Title
Degradation of insulating materials including SiO2 due to SF6 gas dissociation products
Author
Toshio Suzuki;Shigeo Nakayama;Tetsuo Yoshimitsu
Author_Institution
Tokyo Shibaura Electric Co., Ltd., Kawasaki Japan
fYear
1978
fDate
6/1/1978 12:00:00 AM
Firstpage
176
Lastpage
179
Abstract
Materials including silicon dioxide (SiO2) are degraded by SF6 gas dissociation products. In Toshiba Laboratory changes in surface resistivity and volume resistivity of insulating materials including SiO2, for instance porcelain, due to SF6 dissociation products were investigated. It was found that surface resistance and volume resistance of these materials decreased with the existence of SF6 gas dissociation products and moisture. And it was found too that chemical products that lessened the surface and volume resistivity is some acids and some salts of these acids. By chemical analysis almost of these acids are assumed to be H2SiF6.
Keywords
"Moisture","Conductivity","Surface resistance","Porcelain","Electrical resistance measurement","Electrodes"
Publisher
ieee
Conference_Titel
Electrical Insulation, 1978 IEEE International Conference on
Print_ISBN
978-1-5090-3121-4
Type
conf
DOI
10.1109/EIC.1978.7463621
Filename
7463621
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