• DocumentCode
    3772161
  • Title

    Degradation of insulating materials including SiO2 due to SF6 gas dissociation products

  • Author

    Toshio Suzuki;Shigeo Nakayama;Tetsuo Yoshimitsu

  • Author_Institution
    Tokyo Shibaura Electric Co., Ltd., Kawasaki Japan
  • fYear
    1978
  • fDate
    6/1/1978 12:00:00 AM
  • Firstpage
    176
  • Lastpage
    179
  • Abstract
    Materials including silicon dioxide (SiO2) are degraded by SF6 gas dissociation products. In Toshiba Laboratory changes in surface resistivity and volume resistivity of insulating materials including SiO2, for instance porcelain, due to SF6 dissociation products were investigated. It was found that surface resistance and volume resistance of these materials decreased with the existence of SF6 gas dissociation products and moisture. And it was found too that chemical products that lessened the surface and volume resistivity is some acids and some salts of these acids. By chemical analysis almost of these acids are assumed to be H2SiF6.
  • Keywords
    "Moisture","Conductivity","Surface resistance","Porcelain","Electrical resistance measurement","Electrodes"
  • Publisher
    ieee
  • Conference_Titel
    Electrical Insulation, 1978 IEEE International Conference on
  • Print_ISBN
    978-1-5090-3121-4
  • Type

    conf

  • DOI
    10.1109/EIC.1978.7463621
  • Filename
    7463621