Electron and hole mobility in anthracene

Using a pulsed photoconductivity technique, the drift mobilities of electrons and holes in anthracene have been measured as a function of temperature, pressure and crystal orientation. The mobility of both electrons and holes is of the order of one cm²/ volt sec and increases as the temperature is lowered, indicating that band theory is applicable. The anisotropy and pressure dependences of the mobilities are consistent with theoretical calculations.