Recent developments on PULSION® PIII tool: FinFET 3D doping, high temp implantation, III-V doping, contact and silicide improvement, & 450 mm

The development of new architectures, as well as the new materials needed for <; 10 nm nodes, open new challenging applications for ion implantation where PIII (or plasma doping) will have an important role to play, either for doping or for material modification. We demonstrated that our PULSION® tool was ready to address these new challenges thanks to its ability to implant on 3D structures, to do hot implantation, reducing amorphization depth and to efficiently dope III-V materials. Due to its ability to implant high dose at low energies, PULSION® is also very well adapted for material modification applications and its use for NiSi improvement has been demonstrated. Finally scalability toward 450 mm was also proven. We would like to express sincere thanks to all the Laboratories and Companies that have worked with us to generate these data. We also want to thank the Public Authorities in France, as well as by the ENIAC Joint Undertaking for their financial support through PLACES2BE and E450EDL R&D projects.