DocumentCode
3779728
Title
A CMOS A/D converter on laser recrystallized SOI with controlling the crystal growth direction
Author
S. Kuaunoki;K. Sugahara;T. Nisliimura;T. Kumamoto;M. Nakaya;N. Yaiawa;Y. Horiba
Author_Institution
LSI R & D Laboratory, Mitsubishi Electric Corporation, 4-1 Misuhara, Itami 664 Japan
fYear
1987
fDate
5/1/1987 12:00:00 AM
Firstpage
107
Lastpage
108
Abstract
The new laser recrystallization technique which enabled to form the (001) textured SOI with few crystalline defects was developed, and successfully applied for CMOS ICs with analog function for the first time. This technique will widely contribute to the higher performance and the larger scale integration of CMOS-ICs and/or 3-D ICs.
Keywords
"Lasers","MOSFET","Crystals","Silicon","Films","Surface treatment","Analog-digital conversion"
Publisher
ieee
Conference_Titel
VLSI Technology, 1987. SymVLSITech 1987. Symposium on
Print_ISBN
978-1-5090-3151-1
Type
conf
Filename
7508754
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