• DocumentCode
    3781213
  • Title

    A 39 GHz–80 GHz millimeter-wave frequency doubler with low power consumption in 65nm CMOS tehnology

  • Author

    Qian Chen;Fazhi An;Guangyao Zhou;Shunli Ma;Fan Ye;Junyan Ren

  • Author_Institution
    State Key Laboratory of ASIC and System, Fudan University, Shanghai 200433, China
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    A wideband injection locking frequency doubler is proposed for millimeter wave frequency generation in CMOS. The circuit consists of two push-push pairs along with a cross-coupled oscillator which share a current source. The injection locking frequency doubler can generate frequencies from 39 GHz to 80.6 GHz, achieving a wide injection locking range of 69.5 %. The conversion gain of the doubler is more than -15dB in the whole locking range when driving a 30 fF capacitor. Designed in TSMC 65nm CMOS, the circuit has an active area of 340 × 180 um2. The injection locking frequency doubler consumes 11.8 mW dc power from 1.2V supply, while the output buffer consumes 5.96 mW.
  • Keywords
    "Injection-locked oscillators","Frequency conversion","Harmonic analysis","CMOS integrated circuits","Resonant frequency","Power demand"
  • Publisher
    ieee
  • Conference_Titel
    ASIC (ASICON), 2015 IEEE 11th International Conference on
  • Print_ISBN
    978-1-4799-8483-1
  • Electronic_ISBN
    2162-755X
  • Type

    conf

  • DOI
    10.1109/ASICON.2015.7516966
  • Filename
    7516966