• DocumentCode
    3782857
  • Title

    Degradation of /spl alpha/-Si:H TFTs caused by electrostatic discharge

  • Author

    N. Tosic;F.G. Kuper;T. Mouthaan

  • Author_Institution
    MESA Res. Inst., Twente Univ., Enschede, Netherlands
  • Volume
    1
  • fYear
    2000
  • Firstpage
    359
  • Abstract
    This paper gives results of experimental analysis of impact of electrostatic discharge (ESD) pulse on amorphous silicon thin film transistors (/spl alpha/-Si:H TFT). The development of degradation of the electron mobility and the threshold voltage is presented. Failure analysis has been done and two failure mechanisms have been identified.
  • Keywords
    "Degradation","Electrostatic discharge","Thin film transistors","Voltage","Pulse measurements","Electron mobility","MOSFETs","Displays","Circuit testing","Distributed parameter circuits"
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics, 2000. Proceedings. 2000 22nd International Conference on
  • Print_ISBN
    0-7803-5235-1
  • Type

    conf

  • DOI
    10.1109/ICMEL.2000.840589
  • Filename
    840589
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3782857