• DocumentCode
    3783272
  • Title

    Performance of GaAs photoconductive detectors fabricated from different starting materials

  • Author

    L. Ryc;B. Surma;F. Dubecky;L. Dobrzanski;A. Hruban;S. Strzelecka;J. Dresner

  • Author_Institution
    Inst. of Plasma Phys. & Laser Microfusion, Warsaw, Poland
  • fYear
    2000
  • Firstpage
    407
  • Lastpage
    410
  • Abstract
    Four GaAs photoconducting detectors of the same geometry but from different starting materials (of various producers) have been fabricated and then examined for fast response with the use of pulsed excitation of different duration in the optical and X-ray ranges of radiation. Some new techniques have been used for measuring the time characteristics.
  • Keywords
    "Gallium arsenide","Photoconductivity","Photoconducting materials","Radiation detectors","X-ray detection","X-ray detectors","Geometrical optics","Optical materials","Optical pulses","Time measurement"
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on
  • Print_ISBN
    0-7803-5939-9
  • Type

    conf

  • DOI
    10.1109/ASDAM.2000.889532
  • Filename
    889532
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3783272