• DocumentCode
    3783360
  • Title

    Application of neural networks in microwave FET transistor noise modeling

  • Author

    V. Markovic;Z. Marinkovic;N. Males-Ilic

  • Author_Institution
    Fac. of Electron. Eng., Nis Univ., Serbia
  • fYear
    2000
  • Firstpage
    146
  • Lastpage
    151
  • Abstract
    An application of neural networks in microwave FET transistor (MESFET) noise modeling is presented. A multilayer perceptron neural network is implemented to model four transistor noise parameters. Inputs for the neural models include small-signal intrinsic equivalent circuit elements, two equivalent temperatures and frequency, while outputs are noise parameters. Pospieszalski´s approach is employed to characterize the noise parameters.
  • Keywords
    "Microwave FETs","Neural networks","Microwave transistors","Circuit noise","MESFETs","Multilayer perceptrons","Multi-layer neural network","Equivalent circuits","Temperature","Frequency"
  • Publisher
    ieee
  • Conference_Titel
    Neural Network Applications in Electrical Engineering, 2000. NEUREL 2000. Proceedings of the 5th Seminar on
  • Print_ISBN
    0-7803-5512-1
  • Type

    conf

  • DOI
    10.1109/NEUREL.2000.902403
  • Filename
    902403
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3783360