A wave approach to signal and noise modeling of dual-gate MESFET

A new procedure for signal and noise modeling of dual-gate MESFET is described. The small-signal model is based on two cascaded single-gate MESFET intrinsic equivalent circuits embedded in a network representing device parasitics. Wave interpretation of noise is used for defining the noise parameters of each single gate MESFET. On the basis of that, a CAD-oriented procedure is developed for extracting dual-gate MESFET model parameters as well as noise wave temperatures. Modeled S and noise parameter characteristics are compared to measured ones and quite good agreement is observed.