Temperature dependence of electron and hole signals in irradiated p/sup +/-n-n/sup +/ diodes in the presence of continuous carrier injection

Temperature dependence of electron and hole signals in irradiated p/sup +/-n-n/sup +/ diodes in the presence of carrier injection was studied. Diodes fabricated on high (15 k/spl Omega/cm) resistivity silicon wafers were irradiated with neutrons to fluences up to 2/spl times/10/sup 14//cm/sup 2/ 1 MeV neutron NIEL equivalent. The detector signal after illumination with fast (FWHM/spl sim/1 ns) red (/spl lambda/=670 nm) light pulse was an amplified with fast amplifier (f/sub t/=1 GHz) and recorded with fast a digitizing oscilloscope. During measurements the nonequilibrium electron or hole density was changed by illuminating the detector with light of short penetration depth. The effect of charge trapping was studied by observing the change in effective space charge density as the flux of injected carriers was varied.