Noise characterization of Schottky barrier diodes for high-frequency mixing applications

Experimental noise characteristics of diodes with different parameters are presented and discussed with respect to the dominant noise sources. It is shown that diodes with high doped epi-layers cannot be described by the common noise sources. Excellent agreement between measured and calculated results can be achieved for all diodes when the noise contribution due to interfacial traps in the epi-layer is taken into account. The basic noise model of millimeter-wave Schottky barrier diode and a concept of the noise temperature measurement are discussed.