• DocumentCode
    3795894
  • Title

    GaAs Read-type IMPATT diodes for D-band

  • Author

    M. Tschernitz;J. Freyer;H. Grothe

  • Author_Institution
    Lehrstuhl fur Allgemeine Elektrotech., und Angewandte Elektronik, Munchen, Germany
  • Volume
    30
  • Issue
    13
  • fYear
    1994
  • fDate
    6/23/1994 12:00:00 AM
  • Firstpage
    1070
  • Lastpage
    1071
  • Abstract
    GaAs Read-type IMPATT diodes for operation at D-band frequencies have been designed and fabricated. The main design feature is low DC input voltage and high current density. The devices are encapsulated using the novel module technique on diamond heatsinks. RF output powers of 75 mW at 120 GHz and 8 mW at 144 GHz are realised. The highest oscillation frequency for CW operation is 150 GHz.
  • Keywords
    "Gallium compounds","IMPATT diodes","Microwave devices","Semiconductor device modeling","Semiconductor device fabrication"
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19940713
  • Filename
    294805
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3795894