A simple approach for modeling the influence of hot-carrier effect on threshold voltage of MOS transistors

Author

Kaç, Firat ; Kuntman, A. ; Kuntman, Hakan

Author_Institution

Dept. of Electr. & Electron. Eng., Istanbul Univ., Turkey

fYear

2001

fDate

29-31 Oct. 2001

Firstpage

43

Lastpage

46

Abstract

Hot-carrier-induced degradation of MOSFET parameters over time is an important reliability concept in modern microcircuits. In this paper, a new simple expression based on the polynomial approximation is proposed for modeling the influence of hot-carrier effects on MOSFET threshold voltage. The method is especially useful to determine the degradation of MOS transistors in analogue building blocks and to predict operational reliability; therefore, it provides new possibilities in analogue IC design.

Keywords

MOSFET; analogue integrated circuits; harmonic distortion; hot carriers; integrated circuit design; polynomial approximation; semiconductor device models; semiconductor device reliability; MOS transistor degradation; MOSFET; analogue IC design; analogue building blocks; current source-loaded single stage amplifier; harmonic distortion properties; hot-carrier effect; hot-carrier-induced degradation; operation reliability; polynomial approximation; reliability concept; threshold voltage modeling; Degradation; Hot carrier effects; Hot carriers; MOS devices; MOSFET circuits; Microelectronics; Polynomials; Reliability engineering; Threshold voltage; Virtual colonoscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 2001. ICM 2001 Proceedings. The 13th International Conference on

Print_ISBN

0-7803-7522-X

Type

conf

DOI

10.1109/ICM.2001.997482

Filename

997482