Regeneration techniques for RLC VLSI interconnects

On-chip inductance has become of significance in the design of high-speed interconnects. In this paper, three techniques are applied to regenerate an RLC interconnect in series, parallel and without regeneration. Simulations using a 0.25 μm TSMC technology show that the parallel regeneration starts achieving a better speed than the non-regenerated line at wire lengths smaller than that achieved when the wire is serially regenerated. It also features 47% time delay saving and 96% area-delay product saving over the serial regeneration.