• DocumentCode
    3805979
  • Title

    Comment on "Short-Term Anneal of 30-MeV Electron Damage in High-Purity n-Type Silicon"

  • Volume
    19
  • Issue
    1
  • fYear
    1972
  • Firstpage
    897
  • Lastpage
    898
  • Keywords
    "Annealing","Electrons","Silicon","Conductivity","Temperature","Laboratories","Transient analysis","Potential well","Kinetic theory","Steady-state"
  • Journal_Title
    IEEE Transactions on Nuclear Science
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1972.4326614
  • Filename
    4326614
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3805979