• DocumentCode
    3848485
  • Title

    Nonlinear Compact Thermal Model of Power Semiconductor Devices

  • Author

    Krzysztof Gorecki;Janusz Zarebski

  • Author_Institution
    Department of Marine Electronics, Gdynia Maritime University, Gdynia, Poland
  • Volume
    33
  • Issue
    3
  • fYear
    2010
  • Firstpage
    643
  • Lastpage
    647
  • Abstract
    In this paper, the nonlinear compact thermal model of power semiconductor devices based on the Cauer network is proposed. The analytical description of the model and the method of the model parameter estimation are presented. The accuracy and usefulness of the model is verified experimentally for the selected metal-oxide-semiconductor (MOS) power transistor at its various cooling conditions.
  • Keywords
    "Power semiconductor devices","Temperature dependence","Thermal resistance","Semiconductor devices","Impedance","Cooling","Microscopy","Convolution","SPICE","Parameter estimation"
  • Journal_Title
    IEEE Transactions on Components and Packaging Technologies
  • Publisher
    ieee
  • ISSN
    1521-3331
  • Type

    jour

  • DOI
    10.1109/TCAPT.2010.2052052
  • Filename
    5549898
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3848485