• DocumentCode
    3849874
  • Title

    Mixed-Signal Organic Integrated Circuits in a Fully Photolithographic Dual Threshold Voltage Technology

  • Author

    Ivan Nausieda;Kevin Kyungbum Ryu;David Da He;Akintunde Ibitayo Akinwande;Vladimir Bulovic;Charles G. Sodini

  • Author_Institution
    Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, MA, USA
  • Volume
    58
  • Issue
    3
  • fYear
    2011
  • Firstpage
    865
  • Lastpage
    873
  • Abstract
    Analog & digital circuits implemented in a dual threshold voltage (VT) p-channel organic technology are presented. The dual VT organic technology is compatible with large-area and mechanically flexible substrates due to its low processing temperature (≤ 95°C) and scalable patterning techniques. We demonstrate the first analog & digital organic integrated circuits produced by a dual-gate metal process. The analog circuits are powered by a 5-V supply and include a differential amplifier and a two-stage uncompensated operational amplifier (op-amp). A dynamic comparator is measured to have an input offset voltage of 200 mV and latching time of 119 ms. Both the comparator and the op-amp dissipate 5 nW or less. Area-minimized digital logic is presented. Inverters powered by a 3-V supply were measured to have positive noise margins and consumed picowatts of power. An 11-stage ring oscillator, also powered by a 3-V supply, swings near rail to rail at 1.7 Hz. These results demonstrate dual threshold voltage process feasibility for large-area flexible mixed-signal organic integrated circuits.
  • Keywords
    "Inverters","Voltage measurement","Organic thin film transistors","Current measurement","Semiconductor device measurement","Ring oscillators"
  • Journal_Title
    IEEE Transactions on Electron Devices
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2011.2105489
  • Filename
    5710973