Improved flash cell performance by N/sub 2/O annealing of interpoly oxide

In this letter, we report the effects of N/sub 2/O annealing of interpoly oxide on flash cell performance. It is demonstrated that by adding an N/sub 2/O anneal after interpoly oxide formation, improved cycling endurance is achieved. The program and erase efficiencies are also improved significantly, compared to the control cell without N/sub 2/O anneal. The cells with N/sub 2/O anneal show higher cell current (i.e., drain current), which can be ascribed to a lower threshold voltage and higher transconductance, compared to the control cell.