GaAs micromachining for millimeter wave applications

Author

Muller, A. ; Constantinidis, G. ; Neculoiu, D. ; Vasilache, D. ; Lagadas, M. ; Deligeorgis, G. ; Iordanescu, S.

Author_Institution

IMT-Bucharest, Bucharest, Romania

Volume

1

fYear

2002

fDate

2002

Firstpage

25

Abstract

This paper presents the fabrication processes for micromachined millimeter wave devices on micromachined GaAs substrates. The 2.2 μm thin GaAs/AlGaAs membrane, obtained by MBE growth and micromachining of semi-insulating <100> GaAs, is used as support for millimeter wave filter structures. Cascaded coplanar waveguide open-end series stubs filter type structures, with central frequencies of 38 and 77 GHz, as well as monolithic integrated millimeter wave receivers were designed and manufactured on GaAs micromachined substrates.

Keywords

III-V semiconductors; MIMIC; cascade networks; coplanar waveguide components; gallium arsenide; membranes; micromachining; micromechanical devices; millimetre wave filters; millimetre wave receivers; molecular beam epitaxial growth; semiconductor growth; waveguide filters; 2.2 micron; 38 GHz; 77 GHz; GaAs; GaAs micromachining; GaAs-AlGaAs; GaAs/AlGaAs membrane; MBE growth; cascaded coplanar waveguide open-end series stubs filter type structures; central frequency; millimeter wave device applications; millimeter wave filter structures; monolithic integrated millimeter wave receivers; semi-insulating <100> GaAs substrate; Biomembranes; Dielectric substrates; Filters; Frequency; Gallium arsenide; Manufacturing; Micromachining; Millimeter wave circuits; Millimeter wave communication; Millimeter wave technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 2002. CAS 2002 Proceedings. International

Print_ISBN

0-7803-7440-1

Type

conf

DOI

10.1109/SMICND.2002.1105793

Filename

1105793