Structural investigation of LPCVD poly-silicon layers used in surface micromachining

Author

Danila, Mihai ; Manea, Elena ; Muller, Raluca ; Gavrila, Raluca

Author_Institution

Nat. Inst. for R&D in Microtehnologies, Bucharest, Romania

Volume

1

fYear

2002

fDate

2002

Firstpage

91

Abstract

In this application oriented study, we have investigated the microstructure changes of LPCVD poly-silicon layers after phosphorus doping and/or an additional annealing step, compared to the as-deposited layers. X-ray diffraction (XRD) and atomic force microscopy (AFM) investigation techniques were used to obtain information on the grain size, structure, texture, crystalline fraction and surface roughness. We found that deposition of poly-silicon layers in a mixed amorphous/crystalline state at 610°C with a small crystalline fraction and subsequent crystallization induced by additional phosphorus doping and/or annealing steps provide stable films of superior quality.

Keywords

X-ray diffraction; atomic force microscopy; chemical vapour deposition; crystal microstructure; crystallisation; elemental semiconductors; micromachining; recrystallisation annealing; semiconductor doping; silicon; stability; surface texture; surface topography; 610 degC; AFM; LPCVD poly-silicon layer structure; Si; Si:P; X-ray diffraction; XRD; annealing; as deposited layers; atomic force microscopy; crystalline fraction; crystallization; film stability; grain size; layer texture; mixed amorphous/crystalline state deposition; phosphorus doping; processing microstructure changes; surface micromachining; surface roughness; Annealing; Atomic force microscopy; Atomic layer deposition; Crystallization; Doping; Grain size; Micromachining; Microstructure; X-ray diffraction; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 2002. CAS 2002 Proceedings. International

Print_ISBN

0-7803-7440-1

Type

conf

DOI

10.1109/SMICND.2002.1105809

Filename

1105809