DocumentCode
385251
Title
Traps in (nc-Si/CaF2)50 nanostructures
Author
Draghici, M. ; Jdira, L. ; Iancu, V. ; Ioannou-Sougleridis, V. ; Nassiopoulou, A. ; Ciurea, M.L.
Author_Institution
Nat. Inst. of Mater. Phys., Bucharest, Romania
Volume
1
fYear
2002
fDate
2002
Firstpage
119
Abstract
Traps in multi-quantum well (nc-Si/CaF2)50 nanostructures using optical charging spectroscopy method were investigated. Three maxima and a final abrupt increase were found in the discharge current versus temperature characteristics. The relative contributions of the tunneling and displacement currents through the insulating calcium fluoride were analyzed.
Keywords
calcium compounds; electron traps; elemental semiconductors; hole traps; nanostructured materials; semiconductor quantum wells; semiconductor superlattices; silicon; tunnelling; visible spectroscopy; MQW nanocrystalline superlattices; Si-CaF2; discharge current maxima; discharge current/temperature characteristics; displacement currents; insulating calcium fluoride tunneling currents; nanocrystalline Si/CaF2 multi-quantum well nanostructure traps; nanocrystals; optical charging spectroscopy; Calcium; Electron traps; Nanostructured materials; Nanostructures; Optical materials; Optical superlattices; Physics; Silicon; Spectroscopy; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 2002. CAS 2002 Proceedings. International
Print_ISBN
0-7803-7440-1
Type
conf
DOI
10.1109/SMICND.2002.1105814
Filename
1105814
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