Photoluminescence of the nanocrystallites embedded in silicon oxide films

Author

Miu, Mihaela ; Kleps, Irina ; Angelescu, Anca ; Simion, Monica ; Bragaru, Adina

Author_Institution

Nat. Inst. for Res. & Dev. in Microtechnologies, Bucharest, Romania

Volume

1

fYear

2002

fDate

2002

Firstpage

139

Abstract

In the field of silicon based room temperature light emitting materials, besides porous silicon fabricated by anodization, other kinds of films fabricated by sputtering, gas vaporization, and chemical vapor deposition were investigated. These films are two phase structures, with nanocrystallites embedded in an amorphous matrix. From a technological point of view, the chemical stability and robustness of these materials are more suitable for future applications, unlike the rather delicate nature of porous silicon.

Keywords

annealing; chemical vapour deposition; crystallites; elemental semiconductors; island structure; nanostructured materials; photoluminescence; silicon; silicon compounds; sputter deposition; stability; vaporisation; 1000 degC; 1100 degC; Si islands; Si nanocrystallite embedded silicon oxide films; SiO-Si; SiO₂-SiO-Si; amorphous matrix embedded nanocrystallites; anodization fabricated porous silicon; chemical stability; chemical vapor deposition; gas vaporization; material robustness; photoluminescence; photoluminescence spectra; silicon based room temperature light emitting materials; silicon crystallites; silicon monoxide; sputtering; thermal annealing; two phase structures; Amorphous materials; Chemical technology; Chemical vapor deposition; Nanostructures; Photoluminescence; Robust stability; Semiconductor films; Silicon; Sputtering; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 2002. CAS 2002 Proceedings. International

Print_ISBN

0-7803-7440-1

Type

conf

DOI

10.1109/SMICND.2002.1105819

Filename

1105819