DocumentCode
385751
Title
A Two-Stage Monolithic IF Amplifier Utilizing a High Dielectric Constant Capacitor
Author
Chu, A. ; Mahoney, L.J. ; Elta, M.E. ; Courtney, W.E. ; Piacentini, W.J. ; Donnelly, J.P.
Volume
82
Issue
1
fYear
1982
fDate
30103
Firstpage
61
Lastpage
63
Abstract
A two-stage monolithic IF amplifier incorporating sputtered Ta/sub2/05 capacitor has been fabricated. The monolithic capacitor is based on a composite layer structure consisting of Au, Ta, Ta205, Ta and Au. This layered structure is sequentially deposited in a single sputtering run, which eliminates all possibility of particulate contamination. As a result a thin pinhole-free dielectric layer can be deposited over large areas, and 140 pF capacitors have been fabricated with excellent yields. The large unit area capacitance of 1500 pF/mm2 available with the present process has the potential for reducing the size and cost of both microwave monolithic circuits and hybrid thin-film circuits.
Keywords
Capacitance; Capacitors; Dielectric materials; Electrodes; Fabrication; Frequency; Gold; High-K gate dielectrics; Microwave circuits; Sputtering;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Millimeter-Wave Monolithic Circuits
Type
conf
DOI
10.1109/MCS.1982.1112183
Filename
1112183
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