• DocumentCode
    385751
  • Title

    A Two-Stage Monolithic IF Amplifier Utilizing a High Dielectric Constant Capacitor

  • Author

    Chu, A. ; Mahoney, L.J. ; Elta, M.E. ; Courtney, W.E. ; Piacentini, W.J. ; Donnelly, J.P.

  • Volume
    82
  • Issue
    1
  • fYear
    1982
  • fDate
    30103
  • Firstpage
    61
  • Lastpage
    63
  • Abstract
    A two-stage monolithic IF amplifier incorporating sputtered Ta/sub2/05 capacitor has been fabricated. The monolithic capacitor is based on a composite layer structure consisting of Au, Ta, Ta205, Ta and Au. This layered structure is sequentially deposited in a single sputtering run, which eliminates all possibility of particulate contamination. As a result a thin pinhole-free dielectric layer can be deposited over large areas, and 140 pF capacitors have been fabricated with excellent yields. The large unit area capacitance of 1500 pF/mm2 available with the present process has the potential for reducing the size and cost of both microwave monolithic circuits and hybrid thin-film circuits.
  • Keywords
    Capacitance; Capacitors; Dielectric materials; Electrodes; Fabrication; Frequency; Gold; High-K gate dielectrics; Microwave circuits; Sputtering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Millimeter-Wave Monolithic Circuits
  • Type

    conf

  • DOI
    10.1109/MCS.1982.1112183
  • Filename
    1112183