DocumentCode
3862880
Title
Suppression of high gain GaAs photoconductive semiconductor switch at high electric field
Author
Ming Xu;Wei Shi;Xiaoqing He;Zhijing Yan;Hong Liu
Author_Institution
Xi´an University of Technology, Xi´an, Shaanxi, 710048, P.R. China
fYear
2015
Firstpage
1
Lastpage
2
Abstract
In order to explore the efficient THz emitter with GaAs photoconductive semiconductor switch (PCSS), it´s necessary to achieve the suppression of high gain mode in high electric field. The infrared activation and inhibition of high field domains is achieved and the good hold-off characteristics is obtained with 32 kV.
Keywords
"Gallium arsenide","Switches","Electric fields","Silicon","Electrodes","Gain","Photonics"
Publisher
ieee
Conference_Titel
Infrared, Millimeter, and Terahertz waves (IRMMW-THz), 2015 40th International Conference on
ISSN
2162-2027
Electronic_ISBN
2162-2035
Type
conf
DOI
10.1109/IRMMW-THz.2015.7327660
Filename
7327660
Link To Document