• DocumentCode
    3863267
  • Title

    Research on high efficiency silicon-based plasma antenna

  • Author

    Huigang Liu;Da Liang;Liru Ren;Fuhai Zhang;Weidong Geng;Bo Liu

  • Author_Institution
    College of Electronic Information and Optical Engineering, Nankai University, Tianjin, China
  • Volume
    2
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    In this paper, the Lateral Positive-Intrinsic-Negative (LPIN) diode and its application in the high efficiency silicon-based plasma antenna are introduced. A LPIN diode can be employed as a plasma island when sufficient DC power is supplied, which can be used for reconfigurable antennas. The conductivity of intrinsic layer is simulated using the finite element method (FEM). The frequency reconfigurable dipole antenna is design based on LPIN diode array, which comprises 24 LPIN diodes. These research results of this paper can provide theoretical basis for further development of high efficiency frequency reconfigurable silicon-based plasma antenna.
  • Keywords
    "Dipole antennas","Plasmas","Decision support systems","Conductivity","Finite element analysis","Antenna arrays","Silicon"
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference (APMC), 2015 Asia-Pacific
  • Print_ISBN
    978-1-4799-8765-8
  • Type

    conf

  • DOI
    10.1109/APMC.2015.7413168
  • Filename
    7413168
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3863267