Investigation of GaAs/Si solar cell with interfacial defects using ANFIS technique

Our aim in this work is to emphasize the immunity behavior of the GaAs/Si heterostructure against the defects degradation. The main objective of this paper is to propose a new modeling approach using an Adaptive Network based Fuzzy Inference System (ANFIS) to investigate the electrical performance of GaAs/Si solar cell including the interface defects generated by the large lattice mismatch between Si and GaAs. The influence of the interfacial defects on the efficiency has been conducted by extensive simulation using both Atlas 2-D numerical simulator and ANFIS-based computation in order to predict the device behavior under critical conditions. The developed approach can provide many benefits for circuit simulators such as SPICE and PC1D which allows robust optimization of photovoltaic circuit performances.