Charge collection studies of SOI diodes

Author

Colladant, T. ; Ferlet-Cavrois, V. ; Musseau, O. ; L´Hoir, A. ; Campbell, A.B. ; Buchner, S. ; Knudson, A. ; McMorrow, D. ; Fischer, B. ; Schlögl, M. ; Lewis, D.

Author_Institution

Groupe de Phys. des Solides, Univ. Paris 6 - 7, France

fYear

2001

fDate

10-14 Sept. 2001

Firstpage

85

Lastpage

90

Abstract

Charge collection measurements on SOI diodes have been performed with heavy ion microbeam and pulsed focused laser. Both irradiation techniques show that no electrical coupling occurs. However laser measurements show an optical coupling effect when irradiation occurs close to the isolation trench. Qualitative electromagnetic simulations have been performed to confirm and describe the optical coupling.

Keywords

ion beam effects; laser beam effects; semiconductor device measurement; semiconductor device models; semiconductor diodes; silicon-on-insulator; SOI diodes; Si-SiO₂; charge collection; heavy ion microbeam irradiation; optical coupling effect; pulsed focused laser irradiation; qualitative electromagnetic simulations; Charge measurement; Couplings; Current measurement; Insulation life; Performance evaluation; Pulse measurements; Semiconductor diodes; Semiconductor films; Silicon on insulator technology; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and Its Effects on Components and Systems, 2001. 6th European Conference on

Print_ISBN

0-7803-7313-8

Type

conf

DOI

10.1109/RADECS.2001.1159262

Filename

1159262