DocumentCode
387380
Title
Comparison of the sensitivity to heavy ions of 0.25 μm bulk and SOI technologies
Author
Gasiot, G. ; Ferlet-Cavrois, V. ; Roche, P. ; Flatresse, P. ; D´hose, C. ; Musseau, O. ; du Port de Poncharra, J.
Author_Institution
STMicroelectronics, Crolles, France
fYear
2001
fDate
10-14 Sept. 2001
Firstpage
211
Lastpage
216
Abstract
The sensitivity to heavy ions of non-hardened 0.25 μm Partially Depleted (PD) SOI and bulk technologies is studied with experiments, device and circuit simulations. Comparable threshold LET are found for both technologies. Nevertheless, SOI saturated cross section is much lower than bulk one. For non-hardened technologies, SOI is then less sensitive than bulk to heavy ions.
Keywords
integrated circuit modelling; radiation hardening (electronics); semiconductor device models; silicon-on-insulator; 0.25 μm bulk technologies; 0.25 mm; SOI technologies; Si-SiO2; circuit simulations; device simulations; saturated cross section; sensitivity to heavy ions; threshold LET; Circuit simulation; DH-HEMTs; Degradation; Immune system; Parasitic capacitance; Radiation hardening; Random access memory; Robustness; Silicon on insulator technology; Space technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and Its Effects on Components and Systems, 2001. 6th European Conference on
Print_ISBN
0-7803-7313-8
Type
conf
DOI
10.1109/RADECS.2001.1159282
Filename
1159282
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