Dose and dose rate effects on NPN bipolar junction transistors irradiated at high temperature

Author

Boch, J. ; Saigné, F. ; Maurel, T. ; Giustino, F. ; Dusseau, L. ; Schrimpf, R.D. ; Galloway, K.F. ; David, J.P. ; Ecoffet, R. ; Fesquet, J. ; Gasiot, J.

Author_Institution

LAM, Univ. de Reims, France

fYear

2001

fDate

10-14 Sept. 2001

Firstpage

357

Lastpage

362

Abstract

The effect of high temperature irradiation on commercial bipolar junction transistors has been studied for four dose rates. The experimental data presented in this paper show two base current degradation peaks as a function of irradiation temperature. An attempt to physically explain the obtained experimental results is proposed. This explanation is based on the difference in the enhancement-annealing kinetic of the elementary processes at play. The combined effects of high irradiation temperatures and dose rate are also discussed.

Keywords

X-ray effects; annealing; bipolar transistors; gamma-ray effects; semiconductor device measurement; NPN bipolar junction transistors; base current degradation; dose effects; dose rate effects; enhancement-annealing kinetic; high temperature irradiation; irradiation temperature effects; Degradation; Electromagnetic scattering; Environmental economics; Filters; Interface states; Kinetic theory; Particle scattering; Temperature; Testing; USA Councils;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and Its Effects on Components and Systems, 2001. 6th European Conference on

Print_ISBN

0-7803-7313-8

Type

conf

DOI

10.1109/RADECS.2001.1159307

Filename

1159307