Two-dimensional indium gallium arsenide avalanche photodiode arrays for high sensitivity, high speed imaging

Author

Dries, J. Christopher ; Martin, Tara ; Huang, Wei ; Lange, Michael J. ; Cohen, Marshall J.

Author_Institution

Sensors Unlimited, Princeton, NJ, USA

Volume

2

fYear

2002

fDate

10-14 Nov. 2002

Firstpage

758

Abstract

A 32 × 32 element InGaAs focal plane array was demonstrated. These arrays may find application in 3-dimensional imaging systems. APD arrays will be advantageous in these systems since the bandwidths required of the readout integrated circuits push their noise performance into the regime where avalanche photodiodes are useful. Further work is underway on both readout integrated circuits for the arrays, as well as integrated microlenses that will improve the fill-factor of the arrays.

Keywords

III-V semiconductors; avalanche photodiodes; focal planes; gallium arsenide; indium compounds; optical arrays; sensitivity; 32 × 32 element InGaAs focal plane array; InGaAs; avalanche photodiodes; fill-factor; high sensitivity high speed imaging; imaging systems; indium gallium arsenide 2D avalanche photodiode arrays; integrated microlenses; noise performance; readout integrated circuits; Absorption; Avalanche photodiodes; Indium gallium arsenide; Indium phosphide; Optical imaging; Optical materials; Optical pulses; Optical receivers; Sensor arrays; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2002. LEOS 2002. The 15th Annual Meeting of the IEEE

ISSN

1092-8081

Print_ISBN

0-7803-7500-9

Type

conf

DOI

10.1109/LEOS.2002.1159528

Filename

1159528