DocumentCode
389020
Title
GaAs microwave power offset gate MESFETs
Author
Lapin, V.G. ; Ternnov, A.M. ; Krasnik, V.A. ; Petrov, K.I.
Author_Institution
State Res. & Production Corp. Istok, Friazino, Russia
fYear
2001
fDate
14-14 Sept. 2001
Firstpage
135
Lastpage
136
Abstract
Describes microwave power transistors, developed in SRPC "Istok". Characteristics of power GaAs MESFETs and their applications are presented. Power MESFETs have output power density of 0.5 W/mm, power-added efficiency of 35% and thermal resistance of 10-12/spl deg/C/W (for MESFET with total gate width of 4 mm).
Keywords
III-V semiconductors; gallium arsenide; microwave field effect transistors; microwave power transistors; power field effect transistors; thermal resistance; 35 percent; 4 mm; GaAs; III V semiconductors; Istok; SRPC; microwave power offset gate MESFETs; output power density; power-added efficiency; thermal resistance; total gate width;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Telecommunication Technology, 2001. CriMiCo 2001. 11th International Conference on
Conference_Location
Sevastopol, Crimea, Ukraine
Print_ISBN
966-7968-00-6
Type
conf
Filename
1173734
Link To Document