• DocumentCode
    389142
  • Title

    SHF-transistors parameters optimization by germanium doping of silicon monocrystal

  • Author

    Afanas´ev, V.V. ; Brinkevich, D.I. ; Korzhenevski, A.G. ; Prosolovich, V.S. ; Yankovski, Yu.N.

  • Author_Institution
    Byelorussian State Univ., Minsk, Belarus
  • fYear
    2001
  • fDate
    14-14 Sept. 2001
  • Firstpage
    464
  • Lastpage
    466
  • Abstract
    Optimization method of the SHF-transistors parameters has been designed. It is shown that germanium incorporation into SiO/sub 2/ reduces the leakage current and increases the breakdown voltage of MOS-structures.
  • Keywords
    MOSFET; elemental semiconductors; germanium; leakage currents; microwave field effect transistors; semiconductor device breakdown; semiconductor doping; silicon; silicon compounds; MOS structure; SHF transistor; Si-SiO/sub 2/:Ge; breakdown voltage; germanium doping; leakage current; parameter optimization; silicon monocrystal;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Telecommunication Technology, 2001. CriMiCo 2001. 11th International Conference on
  • Conference_Location
    Sevastopol, Crimea, Ukraine
  • Print_ISBN
    966-7968-00-6
  • Type

    conf

  • Filename
    1173933
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=389142