Efficient surface passivation by silicon nitride using a large area deposition system

Author

Kintzel, W. ; Bail, M. ; Auer, R. ; Brendel, R.

Author_Institution

Bavarian Center for Appl. Energy Res., Erlangen, Germany

fYear

2002

fDate

19-24 May 2002

Firstpage

262

Lastpage

265

Abstract

We demonstrate high quality surface passivation of Si wafers with silicon nitride films deposited on an area of 40×40 cm² in a remote plasma-enhanced chemical vapor deposition system. We deposit silicon nitride films on both sides of the wafers at various temperatures and source gas pressures. Lifetime measurements yield a surface recombination velocity of S_eff = 32 cm/s using Si wafers with a resistivity of 1.4 Ωcm. The standard deviation of S_eff is as small as 4 cm/s over the area of 40×40 cm².

Keywords

carrier lifetime; electrical resistivity; elemental semiconductors; passivation; plasma CVD; semiconductor growth; silicon; silicon compounds; solar cells; surface recombination; 1.4 ohmcm; 32 cm/s; 40 cm; Si wafers; SiN-Si; efficient surface passivation; high quality surface passivation; large area deposition system; lifetime measurements; remote plasma-enhanced chemical vapor deposition system; resistivity; silicon nitride films; source gas pressures; standard deviation; surface recombination velocity; thin-film silicon solar cells; Chemical vapor deposition; Conductivity; Lifetime estimation; Passivation; Plasma chemistry; Plasma measurements; Plasma sources; Plasma temperature; Semiconductor films; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE

ISSN

1060-8371

Print_ISBN

0-7803-7471-1

Type

conf

DOI

10.1109/PVSC.2002.1190508

Filename

1190508