Co-integration of acoustic-optic functional devices with semiconductor photodetector using film bonding

Author

Koh, K. ; Okamoto, S. ; Aoki, Y. ; Kaneshiro, C. ; Hohkawa, H.

Author_Institution

Adv. Technol. Res. Center, Kanagawa Inst. of Technol., Japan

Volume

1

fYear

2002

fDate

8-11 Oct. 2002

Firstpage

219

Abstract

In this paper, we report a basic study on fabrication technology of the acousto-optoelectronic integration circuit, in which semiconductor optoelectronic devices and acousto-optic devices are integrated on the piezoelectric substrate by film bonding technology. We proposed the novel film bonding process using a water glass as an adhesive material and investigated process conditions such as concentration and treatment temperature of the water glass etc. The experimental results indicated that this film bonding process enhanced binding strength between GaAs film and piezoelectric substrate, and improved the stress distribution in the GaAs film.

Keywords

III-V semiconductors; acousto-optical devices; adhesion; gallium arsenide; heat treatment; integrated optoelectronics; internal stresses; photodetectors; GaAs; GaAs film; acousto-optic devices; acousto-optoelectronic integration circuit; binding strength; fabrication technology; film bonding; piezoelectric substrate; process conditions; semiconductor photodetector; stress distribution; treatment temperature; water glass adhesive; Bonding processes; Gallium arsenide; Glass; Integrated circuit technology; Optical device fabrication; Optoelectronic devices; Photodetectors; Piezoelectric films; Semiconductor films; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultrasonics Symposium, 2002. Proceedings. 2002 IEEE

ISSN

1051-0117

Print_ISBN

0-7803-7582-3

Type

conf

DOI

10.1109/ULTSYM.2002.1193387

Filename

1193387